 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP4412M Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S 25V 33m 7A SO-8 S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 20 7 5.8 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 20020318 AP4412M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.03 12 7 1.5 5 7 22 14.5 6 218 155 63 Max. Units 33 60 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=7A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= 20V ID=7A VDS=16V VGS=5V VDS=16V ID=7A RG=3.3,VGS=10V RD=2.3 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=2.3A, VGS=0V Min. - Typ. - Max. Units 2.08 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on Min. copper pad. AP4412M 30 25 T C =25 C 25 o 10V 8.0V 6.0V 5.0V ID , Drain Current (A) T C =150 o C 20 10V 8.0V 6.0V 5.0V ID , Drain Current (A) 20 15 15 10 10 V GS =4.0V 5 V GS =4.0V 5 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.8 55 I D =7A T C =25 1.6 I D =7A V GS =10V 50 45 Normalized R DS(ON) 3 4 5 6 7 8 9 10 11 1.4 RDS(ON) (m ) 40 1.2 35 1 30 0.8 25 20 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4412M 8 3 7 6 ID , Drain Current (A) 2 5 4 3 1 2 1 0 25 50 75 100 125 150 PD (W) 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thja) 10 0.2 1ms 10ms 0.1 0.1 0.05 ID (A) 1 0.02 0.01 100ms 1s 0.1 PDM 0.01 Single Pulse t T 10s T C =25 o C Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W DC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4412M 16 f=1.0MHz 1000 14 I D =7A V DS =16V VGS , Gate to Source Voltage (V) 12 Ciss 10 Coss 8 C (pF) 100 Crss 6 4 2 0 0 2 4 6 8 10 12 14 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 2 Tj=150 o C Tj=25 o C VGS(th) (V) 1 0 -50 IS(A) 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4412M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.64 x RATED VDS RG G + 10 v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D 0.64 x RATED VDS G S + QGS QGD VGS 1~ 3 mA IG I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
Price & Availability of AP4412M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |